Title :
Progress in high efficiency silicon cell and module research
Author :
Green, Martin A. ; Wenham, Stuart R. ; Zhao, Jianhua
Author_Institution :
Centre for Photovoltaic Devices & Syst., New South Wales Univ., Kensington, NSW, Australia
Abstract :
This paper describes progress in the silicon cell and module area within the Centre for Photovoltaic Devices and Systems at the University of New South Wales (UNSW). Achievements include the demonstration of the first flat-plate photovoltaic module of independently confirmed energy conversion efficiency above 20%. Also described is pilot production line experience with the processing of buried contact solar cells of efficiency in the 19-20% range and PERL cells (passivated emitter, rear locally diffused cells) of efficiency in the 21-22% range. Other work described includes the achievement of 717 mV in a silicon test structure, and demonstration of efficiencies of 21.9% in n-type silicon cells, close to the highest ever for cells of this dopant type. Also mentioned is the development of modules with static concentrating properties. Finally, work on concepts which could extend silicon efficiency beyond presently recognized limits is described, namely work on the impurity photovoltaic effect of silicon and work on potential of quantum wells for efficiency enhancement
Keywords :
elemental semiconductors; semiconductor device testing; semiconductor quantum wells; silicon; solar cell arrays; solar cells; 19 to 22 percent; Centre for Photovoltaic Devices and Systems; Si; University of New South Wales; buried contact solar cells; efficiency enhancement; energy conversion efficiency; flat-plate photovoltaic module; high efficiency silicon solar cell; impurity photovoltaic effect; quantum wells; static concentrating properties; Energy conversion; Impurities; Photovoltaic cells; Photovoltaic effects; Photovoltaic systems; Potential well; Production; Silicon; Solar power generation; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347086