• DocumentCode
    2310847
  • Title

    Stability studies of component cells for multijunction amorphous silicon alloy solar cells

  • Author

    Xu, Xixiang ; Yang, Jeffrey C. ; Guha, Subhendu

  • Author_Institution
    United Solar Syst. Ltd., Troy, MI, USA
  • fYear
    1993
  • fDate
    10-14 May 1993
  • Firstpage
    971
  • Lastpage
    976
  • Abstract
    The authors have studied the light-induced degradation and saturation behavior of component cells for double- and triple-junction a-Si alloy solar cells. Top a-Si alloy cells reach saturation after 300 hours of one-sun light soaking with 10-12% degradation. Both middle and bottom a-SiGe alloy cells show signs of saturation at around 600 hours under simulated light illumination appropriate for these cells; the degradation after 1000 hours of exposure is 16-18%. Based on this study it is estimated that double-junction cells will degrade by 12-18%, and triple-junction cells will degrade by 10-18%. Experimental results also reveal that the degradation of top cells, particularly in open-circuit voltage, is determined by the bulk properties instead of the interface between p and i layers. Further improvement of bulk intrinsic layer quality of top cells can reduce the degradation of multijunction solar cells
  • Keywords
    Ge-Si alloys; amorphous semiconductors; p-n junctions; semiconductor junctions; solar cells; stability; 300 to 1000 h; SiGe; bottom a-SiGe alloy cells; bulk intrinsic layer quality; double-junction solar cells; middle a-SiGe alloy cells; multijunction amorphous silicon alloy solar cells; multijunction solar cells degradation; one-sun light soaking; open-circuit voltage; stability; top a-Si alloy cells; triple-junction solar cells; Amorphous silicon; Current density; Degradation; Filters; Lighting; Photovoltaic cells; Silicon alloys; Solar system; Stability; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
  • Conference_Location
    Louisville, KY
  • Print_ISBN
    0-7803-1220-1
  • Type

    conf

  • DOI
    10.1109/PVSC.1993.347088
  • Filename
    347088