Title :
The effect of p-layers deposited under varying conditions on hydrogenated amorphous silicon p-i-n homojunction solar cell performance
Author :
Dawson, R.M.A. ; Nag, S.S. ; Wronski, C.R. ; Maley, N.
Author_Institution :
Electron. Mater. & Processing Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Substrate temperature and doping gas ratios are used to vary the boron and hydrogen content of p-type hydrogenated amorphous silicon (a-Si:H). The effects of the doping gas ratio (B2H6:SiH4) and substrate temperature have been studied and conditions were used such as to give optical gaps and dark conductivity activation energies which changed by as much as 0.3 eV while the difference between them remained unchanged. The effects of changes in the absorption coefficient and activation energy on p-i-n solar cell device characteristics are quantified by comparing the measured thin film properties with the collection efficiencies and dark and light current-voltage characteristics
Keywords :
amorphous semiconductors; elemental semiconductors; energy gap; hydrogen; p-i-n photodiodes; p-n homojunctions; semiconductor device testing; semiconductor doping; semiconductor thin films; silicon; solar cells; B2H6; Si:H; SiH4; absorption coefficient; activation energy; collection efficiency; dark I-V characteristics; dark conductivity activation energy; deposition; device characteristics; doping gas ratios; light I-V characteristics; optical gap; p-i-n homojunction solar cell; p-layers; performance; substrate temperature; thin film semiconductor; Absorption; Amorphous silicon; Boron; Conductivity; Doping; Hydrogen; Optical films; PIN photodiodes; Substrates; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347090
