DocumentCode
2310894
Title
Controlling shorts in a-Si modules
Author
Willing, F. ; Oswald, R. ; Newton, J.
Author_Institution
Thin Film Div., Solarex Corp., Newtown, PA, USA
fYear
1993
fDate
10-14 May 1993
Firstpage
946
Lastpage
949
Abstract
As amorphous-silicon technology enters the power generation market, the trends will be towards larger-area modules and multi-junction device structures. These changes will make modules more vulnerable to power losses from shorting. The most common source of shorts, pinholes in the a-Si layer, can be controlled by metallizing substrates immediately after a-Si deposition in a continuous fabrication process. A group of modules made this way had about six times fewer shorting-related defects than a control group which were metallized a few days after a-Si deposition. Power losses from shorts can also be minimized by subdividing modules into smaller sections using a laser scribe
Keywords
amorphous semiconductors; elemental semiconductors; losses; metallisation; short-circuit currents; silicon; solar cells; Si; a-Si deposition; a-Si solar modules; amorphous-silicon solar cells; continuous fabrication process; laser scribe; modules subdivision; multi-junction device structures; pinholes; power losses; shorting; shorting-related defects; substrates metallisation; Contacts; Costs; Current density; Glass; Optical device fabrication; Power generation; Power lasers; Substrates; Thin film devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.347093
Filename
347093
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