Title :
Manufacturing of triple-junction 4 ft2 a-Si alloy PV modules
Author :
Izu, M. ; Deng, X. ; Krisko, A. ; Whelan, K. ; Young, R. ; Ovshinsky, H.C. ; Narasimhan, K.L. ; Ovshinsky, S.R.
Author_Institution :
Energy Conversion Devices Inc., Troy, MI, USA
Abstract :
Spectrum splitting, triple-junction a-Si alloy 4 ft2 PV modules have been assembled utilizing solar cells produced in a 2 Megawatt continuous roll-to-roll manufacturing line. This manufacturing line produces solar cells on a 5 mm thick, 14 inch wide and 2500 foot long stainless steel roll at a speed of 1 ft/min. The layered structure of the solar cells is: SS/Ag/ZnO/n1i1p1//n2i2 p2/n3i3p3/TCO, where i 1 is band-gap graded a-SiGe alloy, i2 and i3 are a-Si and all of p1, p2 and p3 are μc-Si p+. These PV modules provide 9.5% initial and 8.0% stable conversion efficiencies, the highest reported values for a-Si alloy production modules (⩾4 ft2). Major accomplishments which produced the significant efficiency included: (1) the incorporation, for the first time, of a band-gap profiled a-SiGe narrow band-gap solar cell into a continuous roll-to-roll process; (2) the incorporation, for the first time, of a high performance texturized Ag/ZnO back-reflector system into a continuous roll-to-roll process with production subcell yields greater than 99%
Keywords :
Ge-Si alloys; amorphous semiconductors; energy gap; solar cell arrays; solar cells; 5 mm; 8 percent; 9.5 percent; SiGe; a-Si alloy PV modules; band-gap graded a-SiGe alloy; continuous roll-to-roll manufacturing line; conversion efficiencies; layered structure; narrow band-gap solar cell; spectrum splitting; texturized Ag/ZnO back-reflector system; triple-junction a-Si alloy solar modules; Costs; Iron alloys; Manufacturing processes; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Production; Solar power generation; Steel; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347098