• DocumentCode
    2311101
  • Title

    Hydrogen plasma treatment of ZnO-coated TCO films

  • Author

    Sato, Kazuo ; Matsui, Yuji ; Adachi, Kunihiko ; Gotoh, Yoshio ; Hayashi, Yasuo ; Nishimura, Hiromichi

  • Author_Institution
    Adv. Glass R&D Center, Asahi Glass Co. Ltd., Yokohama, Japan
  • fYear
    1993
  • fDate
    10-14 May 1993
  • Firstpage
    855
  • Lastpage
    859
  • Abstract
    Hydrogen plasma treatment of textured SnO2:F TCO (transparent conductive oxide) films coated with ZnO layer of 100 Å in thickness was investigated for high efficiency a-Si solar cells. It was found that a ZnO over-layered structure was effective in improving the hydrogen plasma durability. Furthermore, it was shown that the resistivity of over-layered TCO films decreased dramatically after the hydrogen plasma treatment at a temperature of 300°C without any change in optical transmission. The decrease in resistivity was due to the sufficient increase in Hall mobility, which was caused by the elimination of chemical reduction. After the hydrogen plasma treatment under the optimized condition, the highest Hall mobility of 70 cm2 /V·sec, sheet resistance below 5 Ω/sq,. and optical transmission above 85% were attained
  • Keywords
    CVD coatings; Hall effect; amorphous semiconductors; fluorine; hydrogen; light transmission; plasma applications; silicon; solar cells; sputtered coatings; tin compounds; zinc compounds; 100 A; 300 C; Hall mobility; Si; SnO2:F; ZnO; ZnO layer; ZnO-coated TCO films; chemical reduction elimination; high efficiency a-Si solar cells; hydrogen plasma durability; hydrogen plasma treatment; optical transmission; resistivity; sheet resistance; transparent conductive oxide films; Chemicals; Conductive films; Conductivity; Hall effect; Hydrogen; Optical films; Photovoltaic cells; Plasma chemistry; Plasma temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
  • Conference_Location
    Louisville, KY
  • Print_ISBN
    0-7803-1220-1
  • Type

    conf

  • DOI
    10.1109/PVSC.1993.347109
  • Filename
    347109