Title :
A wide-band low-noise charge amplifier with High Electron Mobility Transistor input stage
Author :
Bertuccio, G. ; Pullia, A.
Author_Institution :
Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy
fDate :
30 Oct-5 Nov 1994
Abstract :
We present the design and performance of a wide-band amplifier for radiation detectors employing an High Electron Mobility Transistor at its input. An Equivalent Noise Charge of less than 150 rms electrons has been measured at room temperature with RC-CR shaping ranging from 100 ns down to 10 ns. The particular requirements and advantages for using HEMTs as front-end device in charge amplifier are analysed
Keywords :
HEMT integrated circuits; detector circuits; nuclear electronics; preamplifiers; wideband amplifiers; RC-CR shaping; charge amplifier; equivalent noise charge; front-end device; high electron mobility transistor input stage; radiation detectors; wide-band amplifier; wide-band low-noise charge amplifier; Broadband amplifiers; Charge measurement; Current measurement; Electron mobility; HEMTs; Low-noise amplifiers; MODFETs; Noise shaping; Radiation detectors; Temperature measurement;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-2544-3
DOI :
10.1109/NSSMIC.1994.474504
