Title :
A study of amorphous silicon-carbon alloy solar cells
Author :
Li, Yong-Ming ; Jackson, F. ; Arya, R.R.
Author_Institution :
Thin Film Div., Solarex Corp., Newtown, PA, USA
Abstract :
Progress in optimizing deposition conditions has significantly improved the opto-electronic properties of intrinsic a-SiC:H alloys. These improvements have been incorporated in single junction p-i-n solar cells. Open circuit voltage Voc as high as 1.04 V and fill factor (FF) as high as 0.75 have been demonstrated. The stability of these devices has also been remarkably improved. The best single junction solar cell with ~1000 A thick a-SiC:H i-layer shows only 13% degradation and retains Voc=0.98 V and FF=0.68 after 1700 hours of light-soaking under AM1.5 equivalent illumination
Keywords :
amorphous semiconductors; energy gap; hydrogen; optical constants; silicon compounds; solar cells; 1000 A; AM1.5 equivalent illumination; SiC:H; amorphous silicon-carbon alloy solar cells; deposition conditions optimisation; fill factor; intrinsic a-SiC:H alloys; light-soaking; open circuit voltage; single junction p-i-n solar cells; stability; Amorphous materials; Electron optics; Optical films; PIN photodiodes; Photonic band gap; Photovoltaic cells; Silicon alloys; Sputtering; Steady-state; Thin film circuits;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347110
