Title :
Driving waveforms for class-F power amplifiers [GaAs MESFETs]
Author :
Rudiakova, A.N. ; Krizhanovski, V.G.
Author_Institution :
Dept. of Radiophys., Donetsk State Univ., Ukraine
Abstract :
High efficiency of power amplifiers can be reached if the active device output current and voltage have the maximally flat waveforms. The existing conventional conditions to provide such waveforms are not sufficient. The additional conditions were obtained in this paper.
Keywords :
III-V semiconductors; MESFET circuits; gallium arsenide; microwave circuits; microwave power amplifiers; GaAs; MESFETs; active device output current; class-F power amplifiers; driving waveforms; efficiency; maximally flat waveforms; microwave power amplifiers; Frequency; Gallium arsenide; High power amplifiers; Impedance; Microwave amplifiers; Microwave circuits; Microwave devices; Power amplifiers; Power system harmonics; Voltage;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.861076
