Title :
Transient photoluminescence measurements on GaAs and AlGaAs double heterostructures
Author :
Halle, Linda F. ; Moss, Steven C. ; Marvin, Dean C.
Author_Institution :
Electron. Technol. Center, Aerosp. Corp., Los Angeles, CA, USA
Abstract :
The authors report a set of transient photoluminescence (TPL) measurements of GaAs and AlGaAs double heterostructure (DH) materials for solar cells as a function of temperature from 10 K to 300 K. They also report measurements of the time-integrated photoluminescence spectra of these samples. The authors observe, in both the spectra and the TPL measurements, evidence that the low temperature photoluminescence kinetics are affected by additional paths for radiative decay that are not evident at room temperature, but have implications for material qualities measured at room temperature
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; photoluminescence; solar cells; GaAs-AlGaAs; GaAs-AlGaAs double heterostructure; low temperature photoluminescence kinetics; radiative decay; solar cells; spectra measurements; time-integrated photoluminescence spectra; transient photoluminescence measurements; Charge carrier lifetime; Gallium arsenide; Laser modes; Luminescence; Optical pulses; Photoluminescence; Pulse measurements; Pump lasers; Temperature measurement; Wavelength measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347124
