Transient photoluminescence measurements on GaAs and AlGaAs double heterostructures

Author

Halle, Linda F. ; Moss, Steven C. ; Marvin, Dean C.

Author_Institution

Electron. Technol. Center, Aerosp. Corp., Los Angeles, CA, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

774

Lastpage

778

Abstract

The authors report a set of transient photoluminescence (TPL) measurements of GaAs and AlGaAs double heterostructure (DH) materials for solar cells as a function of temperature from 10 K to 300 K. They also report measurements of the time-integrated photoluminescence spectra of these samples. The authors observe, in both the spectra and the TPL measurements, evidence that the low temperature photoluminescence kinetics are affected by additional paths for radiative decay that are not evident at room temperature, but have implications for material qualities measured at room temperature

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; photoluminescence; solar cells; GaAs-AlGaAs; GaAs-AlGaAs double heterostructure; low temperature photoluminescence kinetics; radiative decay; solar cells; spectra measurements; time-integrated photoluminescence spectra; transient photoluminescence measurements; Charge carrier lifetime; Gallium arsenide; Laser modes; Luminescence; Optical pulses; Photoluminescence; Pulse measurements; Pump lasers; Temperature measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347124

Filename

347124