Title : 
Solar cells and submodules on CIS prepared by EDCF method
         
        
            Author : 
Arya, R.R. ; Lommasson, T.C. ; Wiedeman, S. ; Russell, L. ; Skibo, S. ; Fogleboch, J.
         
        
            Author_Institution : 
Thin Film Div., Solarex Corp., Newtown, PA, USA
         
        
        
        
        
        
            Abstract : 
We are developing all the necessary processes for large area CIS (CuInSe2) modules. These include the CIS material, window layers, and the interconnect scribing. The authors have developed a process called Elemental Deposition and Compound Formation (EDCF) for preparation of CIS material compatible with large area depositions. Over 10% active area efficiency in a small area solar cell has been achieved on CIS prepared by this process. The CIS process has been scaled-up to areas >400 cm2 (8"×8" substrates). The window layers, CdS and ZnO, have been scaled-up to areas over 1000 cm2 . Laser scribing and mechanical scribing has been developed for modules. Small area interconnected submodules with active area efficiencies over 7% have been demonstrated
         
        
            Keywords : 
copper compounds; heat treatment; indium compounds; laser beam applications; materials preparation; semiconductor growth; semiconductor thin films; solar cell arrays; solar cells; ternary semiconductors; 10 percent; 7 percent; CdS; CuInSe2; Elemental Deposition and Compound Formation; ZnO; active area efficiency; heat treatment; interconnect scribing; laser scribing; mechanical scribing; solar cells; thin film CuInSe2 modules; window layers; Computational Intelligence Society; Material properties; Optical films; Optical materials; Photovoltaic cells; Sputtering; Substrates; Temperature; Transistors; Zinc oxide;
         
        
        
        
            Conference_Titel : 
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
         
        
            Conference_Location : 
Louisville, KY
         
        
            Print_ISBN : 
0-7803-1220-1
         
        
        
            DOI : 
10.1109/PVSC.1993.347127