• DocumentCode
    2311545
  • Title

    Current-voltage characterization of CuInSe2/CdS solar cells deposited by different methods

  • Author

    Shafarman, William N. ; Phillips, James E.

  • Author_Institution
    Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
  • fYear
    1993
  • fDate
    10-14 May 1993
  • Firstpage
    453
  • Lastpage
    458
  • Abstract
    J-V data for six CuInSe2/CdS solar cells fabricated by different techniques at different laboratories have been measured over a wide range of temperature and illumination intensity. The results are analyzed to determine the junction properties and compared for the different devices. Since all the cells have nonlinear contributions in series with the main diode, the diode quality behavior is determined from the results at Voc (J=0) where these series effects do not contribute. The devices all have the same general diode behavior described by a standard diode equation with barrier height of 1.0 eV and diode quality factor near 1.5 over the entire range of temperature and intensity
  • Keywords
    II-VI semiconductors; cadmium compounds; copper compounds; electric current measurement; indium compounds; semiconductor diodes; solar cells; ternary semiconductors; voltage measurement; CuInSe2-CdS; CuInSe2CdS solar cells; barrier height; current-voltage characterization; diode quality behavior; illumination intensity; junction properties; Diodes; Energy conversion; IEC; Lighting; Nonlinear equations; Photovoltaic cells; Photovoltaic systems; Solar power generation; Temperature distribution; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
  • Conference_Location
    Louisville, KY
  • Print_ISBN
    0-7803-1220-1
  • Type

    conf

  • DOI
    10.1109/PVSC.1993.347139
  • Filename
    347139
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2311545