Title :
Current-voltage characterization of CuInSe2/CdS solar cells deposited by different methods
Author :
Shafarman, William N. ; Phillips, James E.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
J-V data for six CuInSe2/CdS solar cells fabricated by different techniques at different laboratories have been measured over a wide range of temperature and illumination intensity. The results are analyzed to determine the junction properties and compared for the different devices. Since all the cells have nonlinear contributions in series with the main diode, the diode quality behavior is determined from the results at Voc (J=0) where these series effects do not contribute. The devices all have the same general diode behavior described by a standard diode equation with barrier height of 1.0 eV and diode quality factor near 1.5 over the entire range of temperature and intensity
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; electric current measurement; indium compounds; semiconductor diodes; solar cells; ternary semiconductors; voltage measurement; CuInSe2-CdS; CuInSe2CdS solar cells; barrier height; current-voltage characterization; diode quality behavior; illumination intensity; junction properties; Diodes; Energy conversion; IEC; Lighting; Nonlinear equations; Photovoltaic cells; Photovoltaic systems; Solar power generation; Temperature distribution; Temperature measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347139
