Novel rapid-thermal-processing for CIS thin-film solar cells

Author

Karg, F. ; Probst, V. ; Harms, H. ; Rimmasch, J. ; Riedl, W. ; Kotschy, J. ; Holt, Jim ; Treichler, R. ; Eibl, O. ; Mitwalsky, A. ; Kiendl, A.

Author_Institution

Central Res. Labs., Siemens AG, Munich, Germany

fYear

1993

fDate

10-14 May 1993

Firstpage

441

Lastpage

446

Abstract

Device quality CuInSe₂ thin films have been synthesized by rapid-thermal-processing (RTP) of elemental Cu-In-Se stacked layers. The authors demonstrate for the first time solar cells with an efficiency above 10% produced at short heating cycles and without using toxic gases. The microstructure of these films is analysed in detail by SEM, TEM and SIMS. Morphology, crystal quality and solar cell efficiency are influenced drastically by the Cu/In atomic ratio. The predominant CIS crystal defects observed in indium-rich films are twins whereas in copper-rich films dislocations, stacking faults and precipitates are also observed

Keywords

copper compounds; crystal microstructure; crystal morphology; dislocations; indium compounds; rapid thermal processing; scanning electron microscope examination of materials; secondary ion mass spectroscopy; solar cells; stacking faults; ternary semiconductors; transmission electron microscope examination of materials; Cu/In atomic ratio; CuInSe₂; CuInSe₂ thin films; SEM; SIMS; TEM; copper-rich films; crystal defects; crystal morphology; crystal quality; dislocations; elemental Cu-In-Se stacked layers; indium-rich films; microstructure; precipitates; rapid-thermal-processing; short heating cycles; solar cell efficiency; stacking faults; thin-film solar cells; Computational Intelligence Society; Copper; Crystal microstructure; Gases; Morphology; Photovoltaic cells; Solar heating; Stacking; Thin film devices; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347141

Filename

347141