Title :
Novel rapid-thermal-processing for CIS thin-film solar cells
Author :
Karg, F. ; Probst, V. ; Harms, H. ; Rimmasch, J. ; Riedl, W. ; Kotschy, J. ; Holt, Jim ; Treichler, R. ; Eibl, O. ; Mitwalsky, A. ; Kiendl, A.
Author_Institution :
Central Res. Labs., Siemens AG, Munich, Germany
Abstract :
Device quality CuInSe2 thin films have been synthesized by rapid-thermal-processing (RTP) of elemental Cu-In-Se stacked layers. The authors demonstrate for the first time solar cells with an efficiency above 10% produced at short heating cycles and without using toxic gases. The microstructure of these films is analysed in detail by SEM, TEM and SIMS. Morphology, crystal quality and solar cell efficiency are influenced drastically by the Cu/In atomic ratio. The predominant CIS crystal defects observed in indium-rich films are twins whereas in copper-rich films dislocations, stacking faults and precipitates are also observed
Keywords :
copper compounds; crystal microstructure; crystal morphology; dislocations; indium compounds; rapid thermal processing; scanning electron microscope examination of materials; secondary ion mass spectroscopy; solar cells; stacking faults; ternary semiconductors; transmission electron microscope examination of materials; Cu/In atomic ratio; CuInSe2; CuInSe2 thin films; SEM; SIMS; TEM; copper-rich films; crystal defects; crystal morphology; crystal quality; dislocations; elemental Cu-In-Se stacked layers; indium-rich films; microstructure; precipitates; rapid-thermal-processing; short heating cycles; solar cell efficiency; stacking faults; thin-film solar cells; Computational Intelligence Society; Copper; Crystal microstructure; Gases; Morphology; Photovoltaic cells; Solar heating; Stacking; Thin film devices; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347141
