Title :
Results of recent CuInSe2 module investigations
Author :
Fredric, C. ; Gay, R. ; Tarrant, D. ; Willett, D.
Author_Institution :
Siemens Solar Ind., Camarillo, CA, USA
Abstract :
Efforts in large-area CuInSe2 module development have focused on simplified, low-cost processing options with improved yield and performance. A large area (3890 cm2), 40.8 W, 10.5% aperture area efficiency module has been demonstrated. Durable module performance, as indicated by over 40 months of continuous outdoor exposure at the National Renewable Energy Research Laboratory PV Outdoor Test Facility, has been shown. Two alternate interconnect structures, designed to simplify processing, have been used to fabricate small-area modules of 10.3% and 11.7% efficiency. Transparent conducting films of ZnO:Al, 1.5 μm thick, have been sputter deposited at rates greater than 3 nm/sec with bulk resistivities of 1.5×10-3 Ω-cm, and cell efficiencies greater than 10% on 100 cm2 substrates have been achieved using this ZnO. Alternate absorber layer formation and substrate selection have led to a 2.5 percentage point increase in average cell performance and a narrower power distribution of these cells. These improvements have resulted in a 3.1 cm2 active area device with 15.1% efficiency
Keywords :
copper compounds; indium compounds; materials preparation; semiconductor device testing; solar cells; substrates; ternary semiconductors; 10.3 to 15.1 percent; 40 month; 40.8 W; CuInSe2; CuInSe2 module investigations; National Renewable Energy Research Laboratory; PV Outdoor Test Facility; ZnO:Al; alternate absorber layer formation; bulk resistivities; interconnect structures; low-cost processing options; small-area modules fabrication; sputter deposition; substrate selection; transparent conducting films; Computational Intelligence Society; Conducting materials; Contamination; Current-voltage characteristics; Electrodes; Fabrication; Insulation; Iron; Substrates; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347142