Title :
The effect of O2 on H2Se selenization in a continuous flow reactor
Author :
Verma, S. ; Russell, TWF ; Birkmire, R.W.
Author_Institution :
Delaware Univ., Newark, DE, USA
Abstract :
Cu-In bilayers were reacted to form CuInSe2 in a continuous flow tubular reactor using a dilute H2Se mixture. The system was evacuated to 1×10-6 torr prior to the introduction of the reacting gas to remove all gas phase contaminants. High efficiency solar cells could not be made on CuInSe2 films formed using only H2Se as the reacting gas. However, by mixing O2 with the H2Se, CuInSe2 was formed and cells with efficiencies over 10% were fabricated. The O2 reacts with the H2Se in the gas phase forming Sex species. At O2/H2Se ratios of 0.9 to 0.2, Cu7Se4 and In2O3 along with CuInSe2 are formed. At low O2/H2Se ratios, 0.02 to 0.004, single phase CuInSe2 films are formed which are suitable for devices
Keywords :
copper compounds; electron beam deposition; hydrogen compounds; indium compounds; oxygen; selenium compounds; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; 0.000001 torr; Cu7Se4; CuInSe2; H2Se; In2O3; O2; O2 effect; continuous flow reactor; dilute H2Se mixture; high efficiency solar cells; selenization; single phase CuInSe2 films; tubular reactor; Argon; Copper; Equations; Heat transfer; Hydrogen; Indium; Inductors; Substrates; Surface structures; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347143
