• DocumentCode
    2311672
  • Title

    The challenges of copper wire bonding

  • Author

    Lu, Charlie Tsung-hsing

  • Author_Institution
    Altera Corp., San Jose, CA, USA
  • fYear
    2010
  • fDate
    20-22 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Advantages of Cu wire bonding, such as less wire sweep, better performance for analog devices, are interpreted by its material properties. Alternative aspect from material properties on Cu wire bonding parameters is proposed to reflect the fact that Cu wire bonding may not necessarily damage the existing under-pad structure of integrated circuit designed for Au wire bonding. The challenge of Cu wire bonding is its process window needs to be tightened than Au wire bonding. The corrosion mechanism of Cu-Al EVlCs is yet clear, the selection of molding compound become critical to achieve longer life for Cu wire bonded devices in terms of IMC corrosion.
  • Keywords
    aluminium alloys; copper alloys; corrosion; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; lead bonding; Cu-Al; EVlC; IMC corrosion; copper wire bonding; corrosion mechanism; integrated circuit; material property; molding compound; underpad structure; Bonding; Copper; Gold; Indexes; Strain; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems Packaging Assembly and Circuits Technology Conference (IMPACT), 2010 5th International
  • Conference_Location
    Taipei
  • ISSN
    2150-5934
  • Print_ISBN
    978-1-4244-9783-6
  • Electronic_ISBN
    2150-5934
  • Type

    conf

  • DOI
    10.1109/IMPACT.2010.5699519
  • Filename
    5699519