DocumentCode
2311672
Title
The challenges of copper wire bonding
Author
Lu, Charlie Tsung-hsing
Author_Institution
Altera Corp., San Jose, CA, USA
fYear
2010
fDate
20-22 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
Advantages of Cu wire bonding, such as less wire sweep, better performance for analog devices, are interpreted by its material properties. Alternative aspect from material properties on Cu wire bonding parameters is proposed to reflect the fact that Cu wire bonding may not necessarily damage the existing under-pad structure of integrated circuit designed for Au wire bonding. The challenge of Cu wire bonding is its process window needs to be tightened than Au wire bonding. The corrosion mechanism of Cu-Al EVlCs is yet clear, the selection of molding compound become critical to achieve longer life for Cu wire bonded devices in terms of IMC corrosion.
Keywords
aluminium alloys; copper alloys; corrosion; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; lead bonding; Cu-Al; EVlC; IMC corrosion; copper wire bonding; corrosion mechanism; integrated circuit; material property; molding compound; underpad structure; Bonding; Copper; Gold; Indexes; Strain; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems Packaging Assembly and Circuits Technology Conference (IMPACT), 2010 5th International
Conference_Location
Taipei
ISSN
2150-5934
Print_ISBN
978-1-4244-9783-6
Electronic_ISBN
2150-5934
Type
conf
DOI
10.1109/IMPACT.2010.5699519
Filename
5699519
Link To Document