Analysis and experimental waveform study on inverse class class-F mode of microwave power FETs

Author

Wei, C.J. ; DiCarlo, P. ; Tkachenko, Y.A. ; McMorrow, R. ; Bartle, D.

Author_Institution

Alpha Ind. Inc., Woburn, MA, USA

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

525

Abstract

The new inverse class F operation mode for high-efficiency power amplifiers is analyzed. Unlike regular class F, it requires an open circuit termination at the second harmonic and a small impedance termination at the third harmonic. The inverse class F features higher PAE than class F but requires transistors with higher breakdown voltages. A study performed using the waveform measurement technique in conjunction with the active/passive load-pull system showed PAE=83% for the inverse class F compared to PAE=64% for the class F. The measured results are in good agreement with the analytical prediction.

Keywords

harmonics; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power field effect transistors; 83 percent; PAE; active/passive load-pull system; breakdown voltages; high-efficiency power amplifiers; impedance termination; inverse class class-F mode; microwave power FETs; open circuit termination; second harmonic; third harmonic; waveform measurement technique; Capacitance; Diodes; Impedance; Microwave FETs; Microwave Theory and Techniques Society; Power system harmonics; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.861106

Filename

861106