DocumentCode
2311807
Title
Nondestructive measurement of bulk lifetime and surface recombination velocities
Author
Ling, Z.G. ; Ajmera, P.K. ; Kousik, G.S.
Author_Institution
Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
fYear
1993
fDate
10-14 May 1993
Firstpage
360
Lastpage
363
Abstract
Bulk lifetime and surface recombination velocities at both the front and the rear surfaces are important parameters that affect the performance of solar cells. In the author´s earlier work (see J. Appl Phys., vol. 72, p.141 (1992)), they presented a detailed theoretical analysis for a contactless nondestructive technique to obtain these parameters. Here, they present the first experimentally measured data using this new approach. Moreover, the earlier analytical work has now been extended to also provide an estimate of the sensitivity of the extracted parameters to errors in experimental measurements. Results on measurements on single crystal silicon wafers are provided as an example
Keywords
carrier lifetime; electron-hole recombination; elemental semiconductors; nondestructive testing; silicon; solar cells; Si; bulk lifetime; front surface; nondestructive measurement; parameter sensitivity; rear surface; single crystal silicon wafers; solar cells; surface recombination velocities; Data mining; Laboratories; Laser beams; Laser excitation; Laser modes; Laser theory; Optical surface waves; Probes; Radiative recombination; Velocity measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.347155
Filename
347155
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