Title :
A 20 GHz Doherty power amplifier MMIC with high efficiency and low distortion designed for broad band digital communication systems
Author :
McCarroll, C.P. ; Alley, G.D. ; Yates, S. ; Matreci, R.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
Abstract :
The design of an 18.8 GHz to 20.2 GHz GaAs PHEMT Doherty amplifier is described. Tested performance of this amplifier is presented including single tone performance and NPR performance with a broadband waveform. The broadband waveform is a digitally generated, 500 MHz, noise like signal. This broadband 500 MHz NPR test is described and is a new capability setup for testing broadband communication power amplifiers.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; digital radio; field effect MMIC; gallium arsenide; microwave links; power integrated circuits; wideband amplifiers; 18.8 to 20.2 GHz; 500 MHz; Doherty power amplifier MMIC; GaAs; GaAs PHEMT amplifier; NPR performance; broadband communication power amplifiers; broadband digital communication systems; high efficiency; low distortion; single tone performance; Broadband amplifiers; Broadband communication; Gallium arsenide; High power amplifiers; MMICs; Noise generators; PHEMTs; Power amplifiers; Signal generators; Testing;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.861112
