A new L-H interface concept for very high efficiency silicon solar cells

Author

Kuznicki, Z.T. ; Muller, J.C. ; Lipinski, M.

Author_Institution

Centre de Recherches Nucl., Strasbourg, France

fYear

1993

fDate

10-14 May 1993

Firstpage

327

Lastpage

331

Abstract

The authors have designed a new back surface field (BSF) solar cell with a substructure of the multi-interface L-H type. Some normally separate phenomena are taken into account simultaneously to model a complex interface inserted in the cell emitter. The theoretical modelization and one-dimensional numerical simulation (using the PC-1D software package) show its yield to be 35-40%. In practice, this would necessitate uniting recent technological advances in the same thin sub-structure to ensure: (i) the absorption of low energy photons; (ii) the optical confinement of the infrared light; and (iii) the formation of an inserted highly doped thin film (δ-doping properties)

Keywords

digital simulation; electronic engineering computing; elemental semiconductors; numerical analysis; p-n heterojunctions; power engineering computing; semiconductor device models; semiconductor doping; semiconductor thin films; silicon; software packages; solar cells; δ-doping properties; 1D numerical simulation; L-H interface; PC-1D; Si; absorption; back surface field; emitter; high efficiency; highly doped thin film; infrared light; low energy photons; modelization; optical confinement; semiconductor; software package; solar cells; Absorption; Carrier confinement; Charge carrier lifetime; Degradation; Doping; Impurities; Optical films; Optical saturation; Photovoltaic cells; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347162

Filename

347162