Title :
Humps in dark I-V-curves-analysis and explanation
Author :
Beier, Jutta ; Voss, B.
Author_Institution :
Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany
Abstract :
Analysing a large number of dark and light I-V curves of different kinds of solar cells, the author noticed two main discrepancies between the measured curves and the two-diode model which was used for the analysis: the value of the diode quality factor of the recombination current, n2, more often than not differs from the usually assumed value of n2=2; and some I-V curves show an additional structure (“hump”) in the voltage range corresponding to the recombination current which cannot be described by varying the value of n2. In this work, the author gives a quantitative analysis and explanation for the observed humps. Starting from their mathematical description, the other forms of deviation from the usual two-diode model are derived
Keywords :
electron-hole recombination; semiconductor device models; semiconductor device testing; solar cells; dark I-V curves; diode quality factor; humps; light I-V curves; quantitative analysis; recombination current; solar cells; two-diode model; voltage range; Charge carrier processes; Current measurement; Diodes; Energy measurement; Lighting; Photovoltaic cells; Q factor; Space charge; Spontaneous emission; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347163