DocumentCode :
2311983
Title :
Interpretation of microwave-detected photoconductance decay lifetime measurements
Author :
Giles, F.P. ; Schwartz, R.J. ; Gray, J.L.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
299
Lastpage :
302
Abstract :
The microwave-detected photoconductance decay technique is potentially useful for its ability to make rapid, contactless measurements of carrier lifetimes. However, there are questions as to the effects of nonuniform excitation of the sample and resultant two-dimensional carrier distributions on the measured microwave reflectance transients, and therefore, the deduced carrier lifetimes. Also, it is not possible to nondestructively distinguish between bulk and surface recombination at the present. The reflectance behavior of a few relevant carrier distributions is investigated. Results demonstrate that the measured reflectance has negligible dependence on the distribution of carriers normal to the sample surfaces, but may significantly depend upon carrier distributions parallel to the sample surfaces
Keywords :
carrier lifetime; electron-hole recombination; microwave measurement; microwave reflectometry; photoconductivity; bulk recombination; carrier lifetimes; microwave reflectance transients; microwave-detected photoconductance decay; nonuniform excitation; rapid contactless measurements; surface recombination; two-dimensional carrier distributions; Charge carrier lifetime; Conductivity; Diode lasers; Electric variables measurement; Microwave measurements; Microwave theory and techniques; Optical pulse generation; Photoconductivity; Pulse measurements; Reflectivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.347167
Filename :
347167
Link To Document :
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