Low temperature back surface passivation for thin silicon solar cells

Author

Bai, Y. ; Rand, J.A. ; Barnett, A.M. ; DiNetta, L.C.

Author_Institution

Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

294

Lastpage

298

Abstract

In this paper, the authors present an effective low temperature back surface passivation technique. This process uses plasma enhanced chemical vapor deposited (PECVD) oxide for thin silicon solar cells that are mechanically supported or free standing. Experimental results show that PECVD oxide, deposited at 300°C and followed by a heat treatment at 350 to 400°C in forming gas, can result in a back surface recombination velocity as low as 7000 cm/s. This process can be used to replace oxidation or back surface field formation where temperature is a constraint. This technique can be extended to front surface passivation as well

Keywords

electron-hole recombination; elemental semiconductors; heat treatment; passivation; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; 300 to 400 C; Si; back surface recombination velocity; free standing; low temperature back surface passivation; mechanical support; plasma enhanced chemical vapor deposited oxide; thin Si solar cells; Degradation; Optical reflection; Oxidation; Passivation; Photovoltaic cells; Plasma temperature; Radiative recombination; Silicon; Surface treatment; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347168

Filename

347168