DocumentCode
2312001
Title
Contribution of the gate insulator surface to work function measurements with a gas sensitive FET
Author
Burgmair, Markus ; Eisele, Lgnaz
Author_Institution
Inst. fur Phys., Univ. der Bundeswehr Munchen, Neubiberg, Germany
Volume
1
fYear
2002
fDate
2002
Firstpage
439
Abstract
Describes the effect of the guard ring for suppression of the baseline drift induced by humidity and the contribution of the gate insulator surface to the measurement of work function shifts induced by the adsorption of gas species.
Keywords
gas sensors; humidity; ion sensitive field effect transistors; work function; ChemFET; adsorption; baseline drift; gas sensitive FET; gate insulator surface; guard ring; humidity; work function measurements; Electric potential; FETs; Gas insulation; Humidity; Hydrogen; Intrusion detection; Silicon; Surface resistance; Temperature sensors; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2002. Proceedings of IEEE
Print_ISBN
0-7803-7454-1
Type
conf
DOI
10.1109/ICSENS.2002.1037132
Filename
1037132
Link To Document