Title :
Contribution of the gate insulator surface to work function measurements with a gas sensitive FET
Author :
Burgmair, Markus ; Eisele, Lgnaz
Author_Institution :
Inst. fur Phys., Univ. der Bundeswehr Munchen, Neubiberg, Germany
Abstract :
Describes the effect of the guard ring for suppression of the baseline drift induced by humidity and the contribution of the gate insulator surface to the measurement of work function shifts induced by the adsorption of gas species.
Keywords :
gas sensors; humidity; ion sensitive field effect transistors; work function; ChemFET; adsorption; baseline drift; gas sensitive FET; gate insulator surface; guard ring; humidity; work function measurements; Electric potential; FETs; Gas insulation; Humidity; Hydrogen; Intrusion detection; Silicon; Surface resistance; Temperature sensors; Transducers;
Conference_Titel :
Sensors, 2002. Proceedings of IEEE
Print_ISBN :
0-7803-7454-1
DOI :
10.1109/ICSENS.2002.1037132
