DocumentCode :
2312038
Title :
Solar cell structures combining amorphous, microcrystalline, and single-crystalline silicon
Author :
Tsuo, Y.S. ; Wu, X. ; Alleman, J.L. ; Li, X. ; Qu, Y. ; Ciszek, T.F. ; Hollingsworth, R.E. ; Bhat, P.K.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
281
Lastpage :
286
Abstract :
Single- or multiple-junction solar cells combining hydrogenated amorphous silicon (a-Si:H) and/or microcrystalline silicon (μc-Si) thin films with a single-crystalline silicon (c-Si) or polycrystalline silicon (poly-Si) substrate have potential for high efficiency and long-term stability. The processing temperatures for such cells need not exceed 250°C and, except for the Si substrate, only chemical and physical vapor depositions are used for cell fabrication. The authors study two cell structures: single-junction with the structure of p-type μc-Si/p-type a-Si:H/n-type c-Si and two-junction with the structure of n-i-p a-SiC:H/n+-p c-Si. In addition to developing solar cells with more efficient light collection, a potential benefit of the multiple-junction cell research is the development of stable, high-efficiency photoelectrodes with a photovoltage of 1.6 V or higher for direct photoelectrolysis of water for hydrogen production. They use a high-frequency (110 MHz) glow discharge of silane for the depositions of μc-Si and a-Si:H
Keywords :
amorphous semiconductors; electrodes; elemental semiconductors; hydrogen; p-n heterojunctions; semiconductor device testing; semiconductor doping; silicon; silicon compounds; solar cells; 1.6 V; 110 MHz; 250 C; HF glow discharge; Si; amorphous semiconductor; chemical vapor deposition; development; direct photoelectrolysis; efficiency; fabrication; hydrogen production; light collection; long-term stability; microcrystalline semiconductor; p-n junction; photoelectrodes; photovoltage; physical vapor deposition; processing; research; silane; single-crystalline semiconductor; solar cells; substrate; Amorphous materials; Amorphous silicon; Chemical processes; Chemical vapor deposition; Fabrication; Hydrogen; Photovoltaic cells; Semiconductor thin films; Stability; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.347170
Filename :
347170
Link To Document :
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