DocumentCode
2312053
Title
An Experimental Study on Latch Up Failure of CMOS LSI
Author
Kohinata, Hideo ; Arai, Masayuki ; Fukumoto, Satoshi
Author_Institution
Tokyo Metropolitan Univ., Hino
fYear
2008
fDate
14-17 July 2008
Firstpage
215
Lastpage
216
Abstract
As the CMOS LSI advances, ESD/latch-up problem is becoming more serious problem as a weakness of CMOS LSI structure. For the first step of our research, we analyze ESD/latch-up fault with actual measurement data in order to cope with this problem.
Keywords
CMOS integrated circuits; electrostatic discharge; large scale integration; CMOS LSI; ESD; latch up failures; measurement data; CMOS process; Costs; Current supplies; Electrostatic discharge; Failure analysis; Large scale integration; Pins; Power supplies; Resistors; Switching circuits; CMOS LSI; latch up;
fLanguage
English
Publisher
ieee
Conference_Titel
Secure System Integration and Reliability Improvement, 2008. SSIRI '08. Second International Conference on
Conference_Location
Yokohama
Print_ISBN
978-0-7695-3266-0
Electronic_ISBN
978-0-7695-3266-0
Type
conf
DOI
10.1109/SSIRI.2008.28
Filename
4579831
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