Title :
DPC on silicon for next generation high power packaging applications
Author_Institution :
R&D Dept., Tong Hsing Electron. Ind., Ltd., Taipei, Taiwan
Keywords :
electronics packaging; power electronics; silicon; DPC; direct plating copper; high power packaging applications; silicon; Aluminum oxide; Electronic packaging thermal management; Packaging; Silicon; Substrates; Thermal conductivity; Thermal expansion;
Conference_Titel :
Microsystems Packaging Assembly and Circuits Technology Conference (IMPACT), 2010 5th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-9783-6
Electronic_ISBN :
2150-5934
DOI :
10.1109/IMPACT.2010.5699545