A f/sub T/=175 GHz carbon-doped base InP/InGaAs HBT

Author

Jong-In Song ; Hong, W.-P. ; Palmstrom, C.J. ; Van Der Gaag, B.P. ; Kyung Bae Chough

Author_Institution

Bellcore, Red Bank, NJ, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

787

Lastpage

790

Abstract

We report the microwave characteristics of an InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor (HBT) utilizing a highly carbon-doped base grown by chemical beam epitaxy (CBE). The HBT having two 1.5/spl times/10 /spl mu/m/sup 2/ emitter fingers exhibited f/sub T/ and f/sub max(MAG)/ of 175 GHz and 70 GHz, respectively, at I/sub C/=40 mA and V/sub CE/=1.5 V. To our knowledge, the f/sub T/ of this device is the highest of any type of bipolar transistors yet reported. The results indicate the great potential of carbon-doped base InP/InGaAs HBTs for high-speed applications.<>

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; 1.5 V; 175 GHz; 40 mA; HBT; InP-InGaAs; InP/InGaAs; carbon-doped base; chemical beam epitaxy; emitter fingers; high-speed applications; microwave characteristics; Carbon dioxide; Current density; Diodes; Doping; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Metallization; Ohmic contacts; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347196

Filename

347196