Title :
Designs of switched-capacitor comparator using low-voltage floating-gate MOS transistors
Author :
Moolpho, Kornika ; Ngarmnil, Jitkasame
Author_Institution :
Dept. of Machatronics Eng., Mahanakorn Univ. of Technol., Bangkok, Thailand
Abstract :
A new structure of comparator circuit based on a pair of complementary floating-gate (FG) MOS transistors is introduced in this paper. Our main design purpose is to focus on low complexity structure and low operating supply voltage. The comparator comprises two stage amplifiers: differential input stage and gain stage. Simulation results from Hspice on 0.25 mum TSMC CMOS technology and 1.5 V power supply are demonstrated. Power consumption of 0.89 muW can be achieved on the operation at 10 MHz and input offset of 50 muV.
Keywords :
CMOS integrated circuits; MOSFET; amplifiers; comparators (circuits); low-power electronics; switched capacitor networks; TSMC CMOS technology; frequency 10 MHz; low-voltage floating-gate MOS transistor; power 0.89 muW; size 0.25 mum; switched-capacitor comparator design; two-stage amplifier; voltage 1.5 V; voltage 50 muV; CMOS technology; Capacitors; Circuit simulation; Design engineering; Inverters; Low voltage; MOSFETs; Power supplies; Switches; Switching circuits; Inverter; Voltage comparator; floating-gate MOSFET;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2009. ECTI-CON 2009. 6th International Conference on
Conference_Location :
Pattaya, Chonburi
Print_ISBN :
978-1-4244-3387-2
Electronic_ISBN :
978-1-4244-3388-9
DOI :
10.1109/ECTICON.2009.5137071
