Title :
High f/sub max/ InAlAs/InGaAs heterojunction bipolar transistors
Author :
Hin-Fai Chau ; Yung-Chung Kao
Author_Institution :
Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
High performance common-emitter InAlAs/InGaAs heterojunction bipolar transistors (HBTs) were fabricated with record maximum oscillation frequencies f/sub max,G/ and f/sub max,U/ of 160 and 236 GHz respectively, obtained using the -20 dB/decade extrapolation of the measured maximum stable gain (MSG) and unilateral power gain (U). The intrinsic f/sub max/ of these devices exceeds 315 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 160 GHz; 236 GHz; InAlAs-InGaAs; InAlAs/InGaAs; MBE; common-emitter transistors; heterojunction bipolar transistors; maximum oscillation frequencies; maximum stable gain; unilateral power gain; Breakdown voltage; Capacitance; Contact resistance; Current measurement; Frequency; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Photonic band gap;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347197
