Flash evaporated layers of (Bi2Te3-Bi2 Se3)(N) and (Bi2Te3-Sb2Te3)(P) used as micro-module-Peltier

(Bi₂Te₃)_0.9(Bi₂Se ₃)_0.1 for n type material powder and (Bi₂ Te₃)_0.25(Sb₂Te₃) _0.75 for p type material powder were evaporated by flash evaporation technique. We obtained a value of Z equal to 0.21×10 ^-4 K^-1 for α=40 μV/K and ρ=50 μΩ.m for p type material and Z about 0.17×10^-3 K^-1 for a=90 μV/K and ρ=30 μΩ.m for n type material (at 300K), for 1 μm layers thickness deposited over polyimide substrate, before annealing. We show that after annealing at 250°C under He atmosphere, the figure of merit of the layers increases to Z=3.2×10^-3 K^-1 for α=240 μV/K and ρ=12 μΩ.m for p type material and Z=1.6x10^-3 K^-1 for α=200 μV/K and ρ=15 μΩ.m for n type material (at 300 K). With these fabrication parameters we realised three different structures of micro-module Peltier (MMP) junctions and we obtained a maximum value for temperature drop between hot and cold sides of about 3.4 K. This result is very promising in order to develop micro-module Peltier (MMP) effects