Title :
Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs
Author :
Wei, H.F. ; Kalkhoran, N.M. ; Namavar, F. ; Chung, J.E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SOI device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.<>
Keywords :
carrier lifetime; electric breakdown of solids; elemental semiconductors; germanium; insulated gate field effect transistors; ion implantation; minority carriers; semiconductor-insulator boundaries; silicon; SOI n-MOSFETs; Si:Ge; back interface region; breakdown voltage; channel defect engineering; ion implantation; minority carrier lifetime killer; off-state leakage; parasitic bipolar effect; source-to-drain breakdown voltage; structural defects; Annealing; Boron; Charge carrier lifetime; Degradation; Fabrication; Implants; Low voltage; MOSFET circuits; Oxidation; Temperature;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347207
