Title :
Oxide-charge generation during hot-carrier degradation of PMOSTs
Author :
Woltjer, R. ; Paulzen, G.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
A new model for oxide-charge generation in PMOSFETs is proposed and verified experimentally. It incorporates Coulomb repulsion and it takes the spatial distribution of the injection into account. It predicts the time dependencies of the gate current, oxide charge, threshold voltage and transconductance. Finally, an extension towards a two-step degradation mechanism is discussed.<>
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor device models; Coulomb repulsion; PMOSFETs; gate current; hot-carrier degradation; injection; model; oxide-charge generation; spatial distribution; threshold voltage; transconductance; two-step degradation; Analytical models; Degradation; FETs; Hot carriers; Kinetic theory; Laboratories; MOSFETs; Predictive models; Transconductance; Voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347213
