Title :
Impact of drain profiles on Ti-salicided pMOSFET characteristics analyzed by a first comprehensive coupled process/device simulator for salicided MOSFETs
Author :
Kai, K. ; Sakakura, H. ; Fukuda, K. ; Kuroda, S. ; Ohtomo, A. ; Ida, J. ; Nishi, K.
Author_Institution :
VLSI Res. & Dev. Center, Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
This paper reports a two-dimensional coupled process/device simulation of salicided MOSFETs for the first time. Process simulation results are in good agreement with the experiments. The device structure by the process simulation is precisely reflected to device simulation. Nonlinear current-voltage characteristics at the silicide/Si interface is included in the analysis and show good agreement with the experiments. Impact of a drain profile on a current distribution of Ti-salicided pMOSFETs is discussed.<>
Keywords :
insulated gate field effect transistors; metallisation; semiconductor device models; semiconductor process modelling; titanium compounds; Ti-salicided pMOSFET; TiSi/sub 2/-Si; current distribution; device simulation; drain profiles; nonlinear current-voltage characteristics; process simulation; silicide/Si interface; two-dimensional coupled process/device simulator; Analytical models; Annealing; Boron; Current distribution; MOSFET circuits; Research and development; Semiconductor process modeling; Silicidation; Silicides; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347214
