Title :
ULSI technology development by predictive simulations
Author :
Pinto, M.R. ; Rafferty, C.S. ; Smith, R.K. ; Bude, J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Integrated semiconductor process and device simulation that is built on physically sound principles and powerful numerical algorithms should be capable of predicting most aspects of IC performance in minutes to hours, based only on process recipes as input. A system is discussed which we believe approaches this ideal for technologies into the 0.1 /spl mu/m regime. Examples cited include intrinsic MOSFET/bipolar modeling, parasitic characterization, novel device analysis and automated design optimization.<>
Keywords :
VLSI; digital simulation; electronic engineering computing; monolithic integrated circuits; semiconductor device models; semiconductor process modelling; simulation; 0.1 micron; IC performance; ULSI technology development; automated design optimization; device analysis; integrated semiconductor process/device simulation; parasitic characterization; predictive simulations; Costs; Design optimization; FETs; Geometry; Power system modeling; Predictive models; Semiconductor process modeling; Solid modeling; Tunneling; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347216
