Title :
Growth of InAs quantum dot laser structures on silicon
Author :
Liu, Alan ; Zhang, Chong ; Gossard, Arthur ; Bowers, John
Author_Institution :
Mater. Dept., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
Abstract :
We report on the direct epitaxial growth of InAs quantum dot based laser structures on silicon substrates. Multiple layers of InAs quantum dots serve as the gain region in a III/V broad area laser structure heteroepitaxially grown on silicon. Aspects of the heteroepitaxy and quantum dot growth are examined.
Keywords :
III-V semiconductors; epitaxial growth; indium compounds; quantum dot lasers; semiconductor epitaxial layers; III/V broad area laser structure; InAs; InAs quantum dot laser structures; Si; direct epitaxial growth; heteroepitaxial growth; multiple layers; silicon substrates; Gallium arsenide; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Silicon; Substrates; Temperature measurement;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6359278
