Title :
High voltage, temperature-hard 3C-SiC Schottky diodes using all-Ni metallization
Author :
Steckl, A.J. ; Su, J.N.
Author_Institution :
Nanoelectron. Lab., Cincinnati Univ., OH, USA
Abstract :
High voltage Schottky diodes have been fabricated on 3C-SiC films grown on Si substrates. A Ni metallization process has been developed to fabricate both rectifying and ohmic contacts to SiC by controlling the post-annealing temperature. A high voltage (>150 V) breakdown has been obtained at room temperature from the SiC Schottky diode. The Ni-SiC Schottky junction shows a thermal resistance for temperatures as high as 600/spl deg/C. This technology has good potential for monolithic integration of SiC high power devices and Si integrated circuits.<>
Keywords :
Schottky-barrier diodes; electric breakdown of solids; metallisation; nickel; power electronics; power integrated circuits; semiconductor materials; semiconductor-metal boundaries; silicon compounds; 150 V; 3C-SiC films; 600 C; HV Schottky diodes; Ni metallization process; Ni-SiC; Si; Si integrated circuits; Si substrates; high power devices; high voltage diodes; monolithic integration; ohmic contacts; post-annealing temperature control; rectifying contacts; temperature-hard devices; thermal resistance; voltage breakdown; Breakdown voltage; Integrated circuit technology; Metallization; Monolithic integrated circuits; Ohmic contacts; Schottky diodes; Semiconductor films; Silicon carbide; Temperature control; Thermal resistance;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347217
