Title :
200/spl deg/C high-temperature and high-speed operation of 440 V lateral IGBTs on 1.5 /spl mu/m thick SOI
Author :
Nakagawa, A. ; Yamaguchi, Y. ; Matsudai, Tomoko ; Yasuhara, N.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
This paper experimentally verifies that high-voltage lateral IGBTs fabricated on SOI of less than 5 /spl mu/m exhibit high switching speed without the need for any special device design. This paper also verifies, for the first time, that thin SOI is a promising candidate for 200/spl deg/C high-temperature operation, because switching speed does not deteriorate at high temperature.<>
Keywords :
electric breakdown of solids; insulated gate bipolar transistors; power integrated circuits; semiconductor switches; semiconductor-insulator boundaries; silicon; switching; 1.5 micron; 200 C; HV device; high-speed operation; high-temperature operation; high-voltage IGBT; lateral IGBTs; switching speed; thin SOI; Current density; Current measurement; Electric breakdown; Electrons; Impurities; Insulated gate bipolar transistors; Leakage current; Temperature; Thickness measurement; Voltage measurement;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347219
