High temperature performance of dielectrically isolated LDMOSFET, LIGBT and LEST

High temperature performance of dielectrically isolated LDMOSFETs, LIGBTs and dual channel LESTs with a breakdown voltage of 500 V are compared. The device parameters measured between 25/spl deg/C and 200/spl deg/C include the on-state current, threshold voltage, transconductance and the switching characteristics. The high temperature performance of the LIGBT is found to be superior to the LEST in terms of on-state current at a given forward bias, the parasitic thyristor latching current density, and the turnoff times. The effect of anode shorting and hybrid Schottky anode structures, for both the LIGBT and LEST, on the tradeoff curves are reported for different operating temperatures.<>