Title :
The trench MOS barrier Schottky (TMBS) rectifier
Author :
Mehrotra, M. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
A new rectifier structure, called Trench MOS Barrier Schottky (TMBS) rectifier has been modeled and fabricated with excellent trade-off characteristics. Two-dimensional numerical simulations have demonstrated coupling between the charge in the N/sup -/ drift region and the metal on the trench sidewalls resulting in an improved electric field distribution. For epitaxial layer doping of 1/spl times/10/sup 17/ cm/sup -3/, simulations show that breakdown voltages of three times the plane parallel breakdown can be achieved with low leakage current. The measured forward drops for the 0.5 /spl mu/m devices at 60 A/cm/sup 2/ and 300 A/cm/sup 2/ were 0.2 V and 0.28 V respectively. Due to smaller drift region resistances, TMBS rectifiers can be operated at large current densities (/spl ap/300 A/cm/sup 2/) resulting in small device sizes.<>
Keywords :
Schottky-barrier diodes; electric breakdown of solids; leakage currents; metal-insulator-semiconductor devices; semiconductor device models; simulation; solid-state rectifiers; 0.5 micron; breakdown voltages; drift region; electric field distribution; epitaxial layer doping; low leakage current; rectifier structure; trench MOS barrier Schottky rectifier; two-dimensional numerical simulations; Breakdown voltage; Current density; Doping; Electrical resistance measurement; Epitaxial layers; Leakage current; Low voltage; Numerical simulation; Rectifiers; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347222
