DocumentCode :
2312524
Title :
High thermal dissipation and high reliability performance of wafer level high power light-emitting diodes
Author :
Lee, Wen-Hao ; Huang, Chun-An ; Chan, Jacky ; Chen, Alex ; Chiu, Steve ; Cheng, Carl
Author_Institution :
Siliconware Precision Ind. Co., Ltd., Taichung, Taiwan
fYear :
2010
fDate :
20-22 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
In this paper we present the thermal analysis and reliability performance of high power light-emitting diodes (LEDs) with silicon carrier packages. The junction temperature of LEDs is an essential reliability parameter. Exceeding the maximum raised junction temperature could lead to light output degradation and sometimes even to destructive failure. Therefore thermal management and proper thermal characterization of high power LEDs is very important for mass production with good optical and reliability performance. Leaf-frame, ceramic and organic material are used as conventional structure. The thermal resistance is 13≃20°C/W and 8≃12°C/W respectively. It will be a drawback for thermal dissipation for high power LEDs especially for outdoor lighting application. Silicon material is a widely investigation material in recently. Low thermal resistance (3≃5°C/W), low cost and high current capacity are good for high power LEDs. Furthermore, the wafer form assembly method is a trend in the future for high volume mass production. Traditionally, silver paste adhesive is used as die attach material. Voids and low thermal conductive are critical issues for high power LEDs due to most of the thermal will cross the chip and raising the silicone material temperature then result in phosphor thermal decay. Here we use eutectic die attach process instead of paste to enhance the thermal dissipation. In the meantime, we use thermal simulation to predict the thermal resistance of the package and also testing the real package. The thermal resistance is 3.9°C/W and 2.77°C/W respectively. Finally, the package reliability also performed such as temperature cycling test (TCT) 1000 cycles, Temperature Humidity Test (THT) 1000Hrs, room temperature life testing and high temperature life testing. The results show the luminous flux decay ≤ 4% which is high reliability performance. And SAT also shows no delamination within th- - e package.
Keywords :
adhesives; cooling; delamination; failure analysis; integrated circuit reliability; life testing; light emitting diodes; mass production; microassembling; phosphors; thermal analysis; thermal conductivity; thermal management (packaging); thermal resistance; wafer level packaging; THT; ceramic material; current capacity; delamination; destructive failure; die attach material; essential reliability parameter; eutectic die attach process; high power LED; high reliability performance; high temperature life testing; high thermal dissipation; high volume mass production; leaf-frame material; light output degradation; luminous flux decay; maximum raised junction temperature; optical performance; organic material; outdoor lighting application; package reliability; phosphor thermal decay; room temperature life testing; silicon carrier packages; silicon material; silicone material temperature; silver paste adhesive; temperature cycling test; temperature humidity test; thermal analysis; thermal characterization; thermal conductive; thermal management; thermal resistance; thermal simulation; wafer form assembly method; wafer level high power light-emitting diodes; Junctions; Light emitting diodes; Reliability; Silicon; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems Packaging Assembly and Circuits Technology Conference (IMPACT), 2010 5th International
Conference_Location :
Taipei
ISSN :
2150-5934
Print_ISBN :
978-1-4244-9783-6
Electronic_ISBN :
2150-5934
Type :
conf
DOI :
10.1109/IMPACT.2010.5699569
Filename :
5699569
Link To Document :
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