Title :
A novel global planarization technology using defocused resist patterning with blanket stripe mask (DRESS)
Author :
Matsubara, Y. ; Akimoto, T. ; Iwasaki, H. ; Ito, S. ; Ishigami, T. ; Noguchi, K. ; Ikawa, E. ; Okumura, K.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
A novel global planarization technology which uses a Defocused Resist patterning with blanket Stripe mask (DRESS) has been developed. DRESS technique consists of the selective formation of the stripe resist pattern on the lower area of the topography, using a blanket stripe mask with a focus on the lower area in order to defocus the resist pattern at the higher area. Using this technique, two global planarization processes were proposed and a remarkable global planarized topology has been achieved for 4-level interconnection with step height as large as 3 /spl mu/m.<>
Keywords :
integrated circuit technology; masks; metallisation; photolithography; surface topography; 3 micron; 4-level interconnection; DRESS; IC fabrication; blanket stripe mask; defocused resist patterning; global planarization technology; selective formation; stripe resist pattern; Coatings; Dielectrics; Etching; Filling; Isolation technology; Lithography; Planarization; Plasma applications; Resists; Surface topography;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347224
