Practical attenuated phase-shifting mask with a single-layer absorptive shifter of MoSiO and MoSiON for ULSI fabrication

Author

Yoshioka, N. ; Miyazaki, J. ; Kusunose, H. ; Hosono, K. ; Nakajima, M. ; Morimoto, Hiroaki ; Watakabe, Y. ; Tsukamoto, K.

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Itami, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

653

Lastpage

656

Abstract

Attenuated phase-shifting mask with a single-layer absorptive shifter with MoSiO or MoSiON films has been developed. These films satisfies the condition both the 180-degree phase shift and the transmittance between 5 and 20%. Conventional mask processes, such as etching, cleaning, defect inspection and defect repair, can be used for the fabrication. Defect-free masks for hole layers of 64 M-bit DRAM have been obtained. Using this mask, the focus depth of 0.35-/spl mu/m hole is improved from 0.6 /spl mu/m to 1.5 /spl mu/m.<>

Keywords

VLSI; integrated circuit technology; masks; photolithography; 0.35 micron; 1.5 micron; 180-degree phase shift; 64 Mbit; DRAM; MoSiO; MoSiON; ULSI fabrication; attenuated phase-shifting mask; defect-free masks; single-layer absorptive shifter; Cleaning; Conductive films; Etching; Fabrication; Inspection; Optical attenuators; Optical films; Optical refraction; Optical variables control; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347227

Filename

347227