DocumentCode :
2312578
Title :
Microelectronics manufacturing science and technology (MMST): single-wafer RTP-based 0.35 /spl mu/m CMOS IC fabrication
Author :
Moslehi, M. ; Velo, L. ; Paranjpe, A. ; Chapman, R. ; Kuehne, J. ; Yong Jin Lee ; Huang, S. ; Schaper, C. ; Breedijk, T. ; Yin, D. ; Anderson, D. ; Davis, C.
Author_Institution :
Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
fYear :
1993
fDate :
5-8 Dec. 1993
Firstpage :
649
Lastpage :
652
Abstract :
We have demonstrated the total use of single-wafer processing for fast-cycle-time IC production. Rapid thermal processes have been developed for all the thermal fabrication steps required in two 0.35-/spl mu/m CMOS technologies. Complete CMOS process integration and 3-day CMOS IC manufacturing cycle time have been demonstrated with all-RTP thermal processing.<>
Keywords :
CMOS integrated circuits; integrated circuit manufacture; integrated circuit technology; rapid thermal processing; 0.35 micron; CMOS IC fabrication; RTP-based process; fast-cycle-time IC production; rapid thermal processes; single-wafer processing; thermal fabrication steps; CMOS process; CMOS technology; Electrical resistance measurement; Fabrication; MOS devices; Manufacturing; Microelectronics; Microwave sensors; Rapid thermal processing; Thermal sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-1450-6
Type :
conf
DOI :
10.1109/IEDM.1993.347228
Filename :
347228
Link To Document :
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