Title :
Device physics origin and solutions to threshold voltage fluctuations in sub 130 nm CMOS incorporating halo implant
Author :
Edwards, Hal ; Chatterjee, Tathagata ; Kassem, Mohamed ; Gomez, Gabriel ; Hou, Fan-Chi ; Wu, Xiaoju
Author_Institution :
Texas Instrum., Inc., Dallas, TX, USA
Abstract :
We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying physical argument. Layout and biasing methods are presented and shown to recover part of the matching degradation due to the halo implant.
Keywords :
CMOS analogue integrated circuits; semiconductor device models; transistors; CMOS transistor; compact model; device physics theory; halo implant; size 130 nm; threshold voltage fluctuation; threshold voltage mismatch; CMOS technology; Implants; Layout; MOS devices; Semiconductor device modeling; Threshold voltage; Transistors; CMOS analog integrated circuits; Differential amplifiers; Transistors;
Conference_Titel :
Circuits and Systems Workshop (DCAS), 2010 IEEE Dallas
Conference_Location :
Richardson, TX
Print_ISBN :
978-1-4244-9535-1
Electronic_ISBN :
978-1-4244-9534-4
DOI :
10.1109/DCAS.2010.5955031
