Title :
Wafer burn-in (WBI) technology for RAM´s
Author :
Furuyama, T. ; Kushiyama, N. ; Noji, H. ; Kataoka, M. ; Yoshida, T. ; Doi, S. ; Ezawa, M. ; Watanabe, T.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A simple and practical wafer burn-in (WBI) technology is described. This technology effectively screens reliability failures of random access memories on a wafer, prior to die-sorting. As a result, obtaining "known-good" RAM chips becomes much more realistic. Since most of the failures occurred during the WBI can be replaced by spare rows or columns, the product yield improves. The new WBI technology uses the conventional wafer prober and multi-chip probe card environment, and does not need any additional process steps which previous WBI proposals required.<>
Keywords :
DRAM chips; SRAM chips; circuit reliability; failure analysis; integrated circuit technology; integrated circuit testing; RAM chips; RAM testing; multichip probe card environment; product yield improvement; random access memories; reliability failure screening; wafer burn-in technology; wafer prober; Assembly; Capacitors; Circuit testing; Costs; Dielectric substrates; Microelectronics; Production; Random access memory; Sorting; Stress;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347230
