Impedance, modulation response, and equivalent circuit of ultra-high-speed InGaAs/GaAs MQW lasers

Author

Weisser, S. ; Tasker, P.J. ; Esquivias, I. ; Ralston, J.D. ; Rosenzweig, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

601

Lastpage

604

Abstract

We present the first direct on-wafer measurements of the electrical impedance of p-doped In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers, and use the results to derive an equivalent circuit model for frequencies up to 50 GHz. In order to explain the impedance characteristics, the effects of carrier capture into the QWs as well as the space-charge capacitance of the diode junction must be taken into account. Utilizing this equivalent circuit in conjunction with intrinsic laser parameters derived from RIN measurements, the electrical modulation response curves can be fitted accurately up to 40 GHz.<>

Keywords

III-V semiconductors; electric impedance measurement; electron traps; equivalent circuits; gallium arsenide; indium compounds; optical modulation; semiconductor lasers; InGaAs-GaAs; InGaAs/GaAs; MQW lasers; carrier capture; electrical impedance; equivalent circuit; intrinsic laser parameters; modulation response; on-wafer measurements; response curves; space-charge capacitance; ultra-high-speed lasers; Electric variables measurement; Equivalent circuits; Frequency; Gallium arsenide; Impedance measurement; Indium gallium arsenide; Laser modes; Masers; Quantum well devices; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347231

Filename

347231