Low-threshold AlGaAs/GaAs vertical-cavity surface-emitting laser on Si substrate at 300 K

Author

Egawa, T. ; Jimbo, T. ; Umeno, M.

Author_Institution

Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

597

Lastpage

600

Abstract

Room-temperature pulsed AlGaAs/GaAs vertical-cavity surface-emitting laser (VCSEL) has been grown on Si substrate using metalorganic chemical vapor deposition. The VCSEL on Si consists of a single quantum well active layer and 20 pairs of AlAs/GaAs distributed Bragg reflectors (DBRs). The measured reflectivity of the 20 pairs of AlAs/GaAs DBR was 93% at the wavelength of 860 nm. The VCSEL on Si exhibits a threshold current of 79 mA and a threshold current density of 4.9 ka/cm/sup 2/ under pulsed condition at 300 K.<>

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; distributed Bragg reflector lasers; gallium arsenide; semiconductor growth; semiconductor lasers; 300 K; 79 mA; 860 nm; AlGaAs-GaAs; AlGaAs/GaAs; Si; Si substrate; VCSEL; distributed Bragg reflectors; metalorganic chemical vapor deposition; reflectivity; room-temperature pulsed laser; single quantum well active layer; threshold current; threshold current density; vertical-cavity surface-emitting laser; Chemical lasers; Chemical vapor deposition; Distributed Bragg reflectors; Gallium arsenide; Optical pulses; Pulsed laser deposition; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347232

Filename

347232