Title :
Optical properties of Ge1−zSnz/ SixGe1−x−ySny heterostructures
Author :
Lin, Hai ; Chen, Robert ; Lu, Weisheng ; Huo, Yijie ; Kamins, Theodore I. ; Harris, James S.
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., Stanford, CA, USA
Abstract :
In their group, the authors have obtained high-quality single GeSn and SiGeSn layers by low-temperature MBE growth and characterized their structural and optical properties. The authors will describe the experimental realization and optical characterization of the GeSn/SiGeSn heterostructures.
Keywords :
Ge-Si alloys; molecular beam epitaxial growth; optical properties; semiconductor heterojunctions; tin alloys; Ge1-zSnz-SixGe1-x-ySny; GeSn/SiGeSn heterostructures; SiGeSn layers; high-quality single GeSn layers; low-temperature MBE growth; optical properties; structural properties; Materials; Optical buffering; Photonic band gap; Physics; Temperature measurement; Tin;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6359295
