Title :
980 nm zone lasers [InGaAs quantum wells]
Author :
Vakhshoori, D. ; Hong, M. ; Asom, M. ; Kojima, K. ; Leibenguth, R.E. ; Wynn, J.D.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Vertical cavity zone lasers (Z-lasers) operating at 980 nm have been fabricated for the first time. This new class of high power (>100 mW) high efficiency (/spl etasub extspl ap/36%) large area (70 /spl mu/m diameter) vertical cavity laser has an output that is automatically focused to a spot at a particular distance away from the laser. This is in contrast to the conventional surface or edge emitting array devices that usually have multiple far-field lobes and need external optical components for focusing purposes.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; semiconductor lasers; 100 mW; 36 percent; 70 micron; 980 nm; InGaAs; InGaAs quantum wells; Z-lasers; automatic output focus; high-power laser; large-area laser; semiconductor lasers; surface-emitting lasers; vertical cavity zone lasers; Indium gallium arsenide; Laser beams; Laser modes; Optical arrays; Power lasers; Quantum well lasers; Semiconductor laser arrays; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347233
